BDV64-a-b-c 26/09/2012 comset semiconductors 1/4 p p n n p p s s i i l l i i c c o o n n d d a a r r l l i i n n g g t t o o n n s s p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s they are silicon epitaxial base transistors mounted in to-3pn. theyare designed for audio output stages and general amplifier and switching applications. complementary is bdv65-a-b-c compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage BDV64 -60 v BDV64a -80 BDV64b -100 BDV64c -120 v cbo collector-base voltage BDV64 -60 v BDV64a -80 BDV64b -100 BDV64c -120 v ebo emitter-base voltage BDV64 -5.0 v BDV64a BDV64b BDV64c i c collector current BDV64 -12 a BDV64a BDV64b BDV64c i cm collector peak current BDV64 -15 BDV64a BDV64b BDV64c i b base current BDV64 -0.5 a BDV64a BDV64b BDV64c
BDV64-a-b-c 26/09/2012 comset semiconductors 2/4 absolute maximum ratings symbol ratings value unit p t power dissipation t mb = 25 c BDV64 125 w BDV64a BDV64b BDV64c t mb = 25 c BDV64 3.5 BDV64a BDV64b BDV64c t j junction temperature BDV64 150 c BDV64a BDV64b BDV64c t s storage temperature BDV64 -65 to +150 BDV64a BDV64b BDV64c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case BDV64 1 c / w BDV64a BDV64b BDV64c r thj-a thermal resistance, junction to ambient BDV64 35.7 BDV64a BDV64b BDV64c
BDV64-a-b-c 26/09/2012 comset semiconductors 3/4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ceo collector cutoff current v ce = -30 v, i b = 0 BDV64 - - -2 ma v ce = -40 v, i b = 0 BDV64a v ce = -50 v, i b = 0 BDV64b v ce = -60 v, i b = 0 BDV64c i ebo emitter cutoff current v be = -5 v, i c = 0 BDV64 - - -5 ma BDV64a BDV64b BDV64c i cbo collector cutoff current i e = 0 t j =25c v cb = -60 v BDV64 - - -0.4 ma v cb = -80 v BDV64a v cb = -100 v BDV64b v cb = -120 v BDV64c i e = 0 t j =150c v cb = -30 v BDV64 - - -2 v cb = -40 v BDV64a v cb = -50 v BDV64b v cb = -60 v BDV64c v ceo collector-emitter breakdown voltage (*) i c = -30 ma, i b = 0 BDV64 -60 - - v BDV64a -80 - BDV64b -100 - - BDV64c -120 - - h fe dc current gain (*) v ce = -4 v, i c = -5 a BDV64 1000 - - - BDV64a BDV64b BDV64c v ce(sat) collector-emitter saturation voltage (*) i c = -5 a, i b = -20 ma BDV64 - - -2 v BDV64a BDV64b BDV64c v be base-emitter voltage(*) v ce = -4 v, i c = -5 a BDV64 - - -2,5 v BDV64a BDV64b BDV64c (*) pulse width 300 s, duty cycle 1.5 %
BDV64-a-b-c 26/09/2012 comset semiconductors 4/4 mechanical data case to3pn n on isolated plastic package revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter package collector
|
